ПРИЛОЖЕНИЕ НА НОВИ ГЕНЕРАЦИИ СИЛОВИ MOSFETS И IGBTS В ЗАВИСИМОСТ ОТ ПРИЛОЖЕНИЕТО ИМ
APPLICATION OF NEW GENERATIONS OF MOSFETS AND IGBTS, POWER SWITCHES, DEPENDING ON THEIR APPLICATION APPLICATION

Summary/Abstract: In semiconductor power converters operating athigher frequencies, the determination of losses in the power semiconductor valves is of particular importance. Resonant and quasi - resonant switching of valves allows to reduce these losses and increase the range of operating frequenciesof electronic devices, in creases reliability and improves electromag - net compatibility with the network and the load. The work of the power trans - Resistors in Power Inverters of Voltage and Switching at Zero Voltagewe have peculiarities that must be taken in to account and require use - special management methodsIn semiconductor power converters operating at higher frequencies, the determination of losses in the power semiconductor valves is of particular importance. Resonant and quasi - resonant switching of valves allows to reduce these losses and increase the range of operating frequencies of electronic devices, increases reliability and improves electromagnet compatibility with the network and the load. The work of the power trans Resistors in Power Inverters of Voltage and Switching at Zero Voltage we have peculiarities that must be taken into account and require use special management methods

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